JOURNAL ARTICLE
Characteristics of Anodized Polycrystalline 3C-SiC Thin Films Deposited by Using Chemical Vapor Deposition with Single-precursor Hexamethyldisilane for Different In-situ-doping Concentrations
Year: 2011 Journal: Journal of the Korean Physical Society Vol: 59 (2)Pages: 285-288 Publisher: Springer Science+Business Media
Keywords:
Materials science Chemical vapor deposition In situ Crystallite Thin film Doping Combustion chemical vapor deposition Anodizing Chemical engineering Optoelectronics Nanotechnology Carbon film Composite material Metallurgy Chemistry Organic chemistry
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Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon Carbide Semiconductor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Copper Interconnects and Reliability
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
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