Polysilicon sacrificial layer etching using ClF3 for thin film encapsulation of silicon acceleration sensors with high aspect ratio

L. Metzger; Frank Fischer; W. Mokwa

doi:10.1016/j.sna.2006.03.017

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Polysilicon sacrificial layer etching using ClF3 for thin film encapsulation of silicon acceleration sensors with high aspect ratio

L. Metzger Frank Fischer W. Mokwa

Year: 2006 Journal: Sensors and Actuators A Physical Vol: 133 (1)Pages: 259-265 Publisher: Elsevier BV

DOI: 10.1016/j.sna.2006.03.017

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Keywords:

Materials science Silicon Optoelectronics Surface micromachining Capacitance Layer (electronics) Etching (microfabrication) Oxide Epitaxy Composite material Fabrication Electrode Metallurgy Chemistry

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Advanced MEMS and NEMS Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Plasma Diagnostics and Applications

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Mechanical and Optical Resonators

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Polysilicon sacrificial layer etching using ClF3 for thin film encapsulation of silicon acceleration sensors with high aspect ratio

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