Geometric structure of thin SiOxNy films on Si(100)

Klaus Behrens; Ernst‐Dieter Klinkenberg; J. Finster; K.‐H. Meiwes‐Broer

doi:10.1016/s0039-6028(97)00998-9

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Geometric structure of thin SiOxNy films on Si(100)

Klaus Behrens Ernst‐Dieter Klinkenberg J. Finster K.‐H. Meiwes‐Broer

Year: 1998 Journal: Surface Science Vol: 402-404 Pages: 729-733 Publisher: Elsevier BV

DOI: 10.1016/s0039-6028(97)00998-9

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Keywords:

Coordination number X-ray photoelectron spectroscopy Amorphous solid Bond length Extended X-ray absorption fine structure Tetrahedron Thin film Atom (system on chip) Chemical vapor deposition Oxygen Molecular geometry Deposition (geology) Materials science Chemical bond Crystallography Analytical Chemistry (journal) Chemistry Crystal structure Nanotechnology Molecule Optics Absorption spectroscopy Nuclear magnetic resonance Physics

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Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

X-ray Diffraction in Crystallography

Physical Sciences → Materials Science → Materials Chemistry

X-ray Spectroscopy and Fluorescence Analysis

Physical Sciences → Physics and Astronomy → Radiation

Geometric structure of thin SiOxNy films on Si(100)

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