Intrinsic Electrical Conductivity in Silicon Carbide

Abstract

Intrinsic electrical conductivity in $n$-type hexagonal silicon carbide single crystals has been measured. The method of measurement is discussed. The value for the band gap extrapolated to absolute zero, assuming intrinsic conductivity of the form $\ensuremath{\sigma}=\mathrm{constant}\ifmmode\times\else\texttimes\fi{}{e}^{\ensuremath{-}\frac{\ensuremath{\Delta}E}{2kT}}$, has been found to be $\ensuremath{\Delta}E(0)=3.1\ifmmode\pm\else\textpm\fi{}0.2$ ev. The conductivity intercept at $T=\ensuremath{\infty}$ is (1.3\ifmmode\pm\else\textpm\fi{}0.7)\ifmmode\times\else\texttimes\fi{}${10}^{4}$ (ohm-${\mathrm{c}\mathrm{m})}^{\ensuremath{-}1}$.