Gas Sensing Properties of ZnO:Al Thin Films Prepared by RF Magnetron Sputtering
Lay Gaik TeohHong Ming ChenYen‐Hsun SuWei Hao LaiShih Min ChouMin Hsiung Hon
Abstract
The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was 20 at an operating temperature of 250. The high sensitivity, fast recovery, and reliability suggest that ZnO:Al thin film prepared by RF magnetron sputtering can be used for ethanol vapor gas sensing.
Metrics
Topics
Related Documents
Properties of transparent conductive ZnO:Al thin films prepared by magnetron sputtering
Engang FuDa-Ming ZhuangGong ZhangMing ZhaoWei-Fang YangJia-Jun Liu
Structural and optical properties of ZnO:Al thin films prepared by RF magnetron sputtering
Yanqing GaoJianhua MaZhiming HuangYun HouJing WuJunhao Chu
Crystallization Process of ZnO:Al Thin Films Prepared by RF Magnetron Sputtering.
Akio SuzukiTatsuhiko MatsushitaMasahiro Okuda
ZnO:Al films prepared by inline DC magnetron sputtering
Astrid BingelKevin FüchselNorbert KaiserAndreas Tünnermann
Transparent conducting impurity-co-doped ZnO:Al thin films prepared by magnetron sputtering
Tadatsugu MinamiShingo SuzukiToshihiro Miyata