InAlAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process

Abstract

The DC and RF performance of InAlAs/InGaAs/InP HEMTs fabricated using a double-recess gate process are reported. A gate-drain breakdown voltage as high as 16 V was observed. The HEMTs also exhibited a high sourcedrain breakdown voltage near pinchoff of 16 V and a low RF output conductance of 6mS/mm. For a 1.4 μm gate length, an intrinsic transconductance of 560 mS/mm and fr and fmax values of 16 and 40 GHz, respectively, were achieved.