Electronic properties of amorphous silicon selenium films

F. G. Wakim; S. A. Abo-Namous; A. Al-Jassar; Majid Hassan

doi:10.1063/1.93991

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Electronic properties of amorphous silicon selenium films

F. G. Wakim S. A. Abo-Namous A. Al-Jassar Majid Hassan

Year: 1983 Journal: Applied Physics Letters Vol: 42 (6)Pages: 523-524 Publisher: American Institute of Physics

DOI: 10.1063/1.93991

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Abstract

The presence of selenium in amorphous silicon films increases the optical gap from 1.25 to 1.8 eV. At the same time, the room-temperature resistivity increases by four orders of magnitude and thermal activation energy increases from 0.16 to 0.76 and 0.41 eV for the high and low-temperature regions, respectively.

Keywords:

Silicon Selenium Materials science Amorphous solid Amorphous silicon Electrical resistivity and conductivity Band gap Amorphous semiconductors Analytical Chemistry (journal) Optoelectronics Crystalline silicon Chemistry Crystallography Metallurgy Physics

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Topics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

Electronic properties of amorphous silicon selenium films

Abstract

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