Electronic properties of intrinsic and doped amorphous silicon carbide films

Michael Vetter; C. Voz; R. Ferré; Isidro Martín; A. Orpella; Joaquim Puigdollers; J. Andreu; R. Alcubilla

doi:10.1016/j.tsf.2005.11.108

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Electronic properties of intrinsic and doped amorphous silicon carbide films

Michael Vetter C. Voz R. Ferré Isidro Martín A. Orpella Joaquim Puigdollers J. Andreu R. Alcubilla

Year: 2006 Journal: Thin Solid Films Vol: 511-512 Pages: 290-294 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2005.11.108

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Keywords:

Passivation Materials science Activation energy Conductivity Arrhenius equation Amorphous solid Surface conductivity Amorphous silicon Silicon carbide Doping Dielectric Deposition (geology) Electrical resistivity and conductivity Analytical Chemistry (journal) Atmospheric temperature range Thin film Crystalline silicon Composite material Layer (electronics) Nanotechnology Optoelectronics Chemistry Thermodynamics Crystallography Physical chemistry

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic properties of intrinsic and doped amorphous silicon carbide films

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