Epitaxial Growth of Pb0.918Sn0.082Se Films on CaF2 and BaF2 Substrates

Tao Tao; C. C. Wang

doi:10.1063/1.1661272

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Epitaxial Growth of Pb0.918Sn0.082Se Films on CaF2 and BaF2 Substrates

Tao Tao C. C. Wang

Year: 1972 Journal: Journal of Applied Physics Vol: 43 (3)Pages: 1313-1316 Publisher: American Institute of Physics

DOI: 10.1063/1.1661272

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Abstract

Single-crystal (111) Pb0.918Sn0.082Se films have been deposited on cleaved (111) BaF2 substrates by both the flash and the one-boat evaporation methods. On cleaved (111) CaF2 substrates, single-crystal (111) films were obtained only when one-boat evaporation was used. At 87°K, mobilities up to 1.3×104 cm2/V sec have been obtained.

Keywords:

Epitaxy Evaporation Flash evaporation Materials science Crystal growth Single crystal Crystal (programming language) Crystallography Thin film Analytical Chemistry (journal) Chemistry Nanotechnology Organic chemistry

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ZnO doping and properties

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Electronic and Structural Properties of Oxides

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Epitaxial Growth of Pb0.918Sn0.082Se Films on CaF2 and BaF2 Substrates

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