Vacuum epitaxial growth of Pb1−xSnxTe films on cleaved BaF2 substrates

William S. Chan

doi:10.1016/0020-0891(74)90020-7

ScienceGate Book Chapters

JOURNAL ARTICLE

Vacuum epitaxial growth of Pb1−xSnxTe films on cleaved BaF2 substrates

William S. Chan

Year: 1974 Journal: Infrared Physics Vol: 14 (3)Pages: 177-181 Publisher: Pergamon Press

DOI: 10.1016/0020-0891(74)90020-7

Get Full-Text PDF Get Analytical Report

Keywords:

Epitaxy Materials science Substrate (aquarium) Vacuum deposition Deposition (geology) Fabrication Vacuum evaporation Evaporation Thin film Analytical Chemistry (journal) Atmospheric temperature range Optoelectronics Crystallography Nanotechnology Chemistry Layer (electronics)

Metrics

Cited By

2.87

FWCI (Field Weighted Citation Impact)

Refs

0.91

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Vacuum epitaxial growth of Pb1−xSnxTe films on cleaved BaF2 substrates

Metrics

Citation History

Topics

Related Documents

Thick Epitaxial Films of Pb1−xSnxTe

Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates

Electrical Transport Properties of Epitaxial Films of Pb1−xSnxTe

Open tube vapor transport growth of Pb1−xSnxTe epitaxial films for infrared detectors

A new technique for growing epitaxial films of Pb1−xSnxTe