&lt;title&gt;Bismuth thin films obtained by pulsed laser deposition&lt;/title&gt;

T. Flores; M. Arronte; E. Rodríguez; L. Ponce; J. C. Alonso; Cristina García–Cardona; M. Fernández; E. Haro

doi:10.1117/12.358343

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<title>Bismuth thin films obtained by pulsed laser deposition</title>

T. Flores M. Arronte E. Rodríguez L. Ponce J. C. Alonso Cristina García–Cardona M. Fernández E. Haro

Year: 1999 Journal: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Vol: 3572 Pages: 70-73 Publisher: SPIE

DOI: 10.1117/12.358343

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Abstract

In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

Keywords:

Thin film Laser Materials science Pulsed laser deposition Raman spectroscopy Bismuth Evaporation Deposition (geology) Optoelectronics Diffraction Characterization (materials science) Optics Spectroscopy Analytical Chemistry (journal) Chemistry Nanotechnology Physics

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Laser-induced spectroscopy and plasma

Physical Sciences → Engineering → Mechanics of Materials

Advanced Materials Characterization Techniques

Physical Sciences → Engineering → Biomedical Engineering

Advanced Sensor Technologies Research

Physical Sciences → Engineering → Biomedical Engineering

<title>Bismuth thin films obtained by pulsed laser deposition</title>

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