JOURNAL ARTICLE

Chemically Vapor Deposited Polycrystalline-Silicon Films

T. I. Kamins

Year: 1974 Journal:   IEEE Transactions on Parts Hybrids and Packaging Vol: 10 (4)Pages: 221-229   Publisher: Institute of Electrical and Electronics Engineers

Abstract

In recent years polycrystalline silicon deposited by chemical vapor deposition has become of importance in many semiconductor applications. The formation and properties of films deposited for different applications are reviewed in this paper, and the use of the films in semiconductor devices is discussed. The deposition temperature, gases, and impurities are found to have the major influence on the properties of the films. These deposition variables significantly affect the crystal

Keywords:
Chemical vapor deposition Materials science Silicon Polycrystalline silicon Semiconductor Crystallite Deposition (geology) Impurity Chemical engineering Combustion chemical vapor deposition Nanotechnology Optoelectronics Carbon film Thin film Chemistry Metallurgy Thin-film transistor Organic chemistry Layer (electronics) Geology

Metrics

30
Cited By
2.16
FWCI (Field Weighted Citation Impact)
49
Refs
0.86
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Nanowire Synthesis and Applications
Physical Sciences →  Engineering →  Biomedical Engineering
Thin-Film Transistor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon Nanostructures and Photoluminescence
Physical Sciences →  Materials Science →  Materials Chemistry

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