Corrections to "Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's"

K.W. Lee

doi:10.1109/t-ed.1986.22506

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Corrections to "Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's"

K.W. Lee

Year: 1986 Journal: IEEE Transactions on Electron Devices Vol: 33 (3)Pages: 429-429 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/t-ed.1986.22506

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Keywords:

Materials science Optoelectronics Saturation velocity Ion implantation Velocity saturation Gallium arsenide Ion Equivalent series resistance Saturation (graph theory) Electrical engineering Series (stratigraphy) Electron MOSFET Engineering Chemistry Physics Transistor Voltage Geology Mathematics

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Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Corrections to "Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's"

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