Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Seok Man Hong; Hee-Dong Kim; Ho-Myoung An; Tae Geun Kim

doi:10.1016/j.materresbull.2013.05.073

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Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Seok Man Hong Hee-Dong Kim Ho-Myoung An Tae Geun Kim

Year: 2013 Journal: Materials Research Bulletin Vol: 48 (12)Pages: 5080-5083 Publisher: Elsevier BV

DOI: 10.1016/j.materresbull.2013.05.073

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Keywords:

Materials science Thermal conduction Optoelectronics Resistive random-access memory Tungsten Nitride Ohmic contact CMOS Semiconductor Thin film Oxide Non-volatile memory Titanium nitride Resistive touchscreen Protein filament Voltage Electrical engineering Nanotechnology Composite material Metallurgy

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

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