C‐V Characteristics of Amorphous Silicon Nitride Films Prepared by Hydrogen Radical‐Assisted Plasma Chemical Vapor Deposition

Kanji Yasui; Hisashi Takahashi; Tadashi Akahane

doi:10.1149/1.2054803

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C‐V Characteristics of Amorphous Silicon Nitride Films Prepared by Hydrogen Radical‐Assisted Plasma Chemical Vapor Deposition

Kanji Yasui Hisashi Takahashi Tadashi Akahane

Year: 1994 Journal: Journal of The Electrochemical Society Vol: 141 (3)Pages: 742-746 Publisher: Institute of Physics

DOI: 10.1149/1.2054803

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Abstract

Hydrogen radicals were irradiated to the surface during radio frequency plasma deposition with and gas mixture. The hydrogen radicals were generated by microwave plasma. The capacitance‐voltage characteristics were measured to investigate the defects in films and the interface. Effect of the hydrogen radical irradiation on the reduction of the defects responsible for the flatband voltage and the hysteresis voltage was investigated.

Keywords:

Hydrogen Chemical vapor deposition Silicon nitride Plasma-enhanced chemical vapor deposition Radical Materials science Deposition (geology) Amorphous solid Irradiation Analytical Chemistry (journal) Chemistry Chemical engineering Silicon Photochemistry Nanotechnology Optoelectronics Organic chemistry

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C‐V Characteristics of Amorphous Silicon Nitride Films Prepared by Hydrogen Radical‐Assisted Plasma Chemical Vapor Deposition

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