The design of CMOS RF low noise amplifiers

Ke Cao; Huazhong Yang; Hui Wang

doi:10.1109/icasic.2003.1277406

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JOURNAL ARTICLE

The design of CMOS RF low noise amplifiers

Ke Cao Huazhong Yang Hui Wang

Year: 2003 Vol: 8 Pages: 1106-1109 Vol.2

DOI: 10.1109/icasic.2003.1277406

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Abstract

A design approach of CMOS radio frequency (RF) low noise amplifiers (LNAs) is presented in this paper. With short-channel MOSFET model, analytical model of the source degenerated amplifiers is derived and verified by simulation at 2.4GHz with 0.18mm technology. It is shown that low noise and low power may probably be achieved simultaneously. With the help of these models, the designer can not only get the optimal designs or quickly and intuitively dig out the problem of the circuitry.

Keywords:

Amplifier CMOS Electronic engineering Noise (video) Computer science Low-noise amplifier Noise figure Radio frequency Amplifier figures of merit Electrical engineering MOSFET Engineering Transistor Voltage

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Radio Frequency Integrated Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electromagnetic Compatibility and Noise Suppression

Physical Sciences → Engineering → Electrical and Electronic Engineering

Microwave Engineering and Waveguides

Physical Sciences → Engineering → Electrical and Electronic Engineering

The design of CMOS RF low noise amplifiers

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