Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Young‐Woo Ok; Chel‐Jong Choi; Tae‐Yeon Seong; Katsuhiro Uesugi; I. Suemune

doi:10.1007/s11664-001-0079-y

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Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Young‐Woo Ok Chel‐Jong Choi Tae‐Yeon Seong Katsuhiro Uesugi I. Suemune

Year: 2001 Journal: Journal of Electronic Materials Vol: 30 (7)Pages: 900-906 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-001-0079-y

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Keywords:

Transmission electron microscopy Molecular beam epitaxy Materials science Crystallinity Epitaxy Dopant Faceting Electron diffraction Metalorganic vapour phase epitaxy Crystallography Layer (electronics) Diffraction Optoelectronics Analytical Chemistry (journal) Chemistry Doping Nanotechnology Optics Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

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