JOURNAL ARTICLE

Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Young‐Woo OkChel‐Jong ChoiTae‐Yeon SeongKatsuhiro UesugiI. Suemune

Year: 2001 Journal:   Journal of Electronic Materials Vol: 30 (7)Pages: 900-906   Publisher: Springer Science+Business Media
Keywords:
Transmission electron microscopy Molecular beam epitaxy Materials science Crystallinity Epitaxy Dopant Faceting Electron diffraction Metalorganic vapour phase epitaxy Crystallography Layer (electronics) Diffraction Optoelectronics Analytical Chemistry (journal) Chemistry Doping Nanotechnology Optics Physics

Metrics

3
Cited By
0.22
FWCI (Field Weighted Citation Impact)
11
Refs
0.51
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
© 2026 ScienceGate Book Chapters — All rights reserved.