JOURNAL ARTICLE

Nanostructural Characteristics and Mechanical Properties of Low Temperature Plasma Enhanced Chemical Vapor Deposited Silicon Nitride Thin Films

Han HuangJ.M. DellSi‐Heng Liu

Year: 2009 Journal:   Journal of Nanoscience and Nanotechnology Vol: 9 (6)Pages: 3734-3741   Publisher: American Scientific Publishers

Abstract

This paper reports nanostructural characteristics and mechanical properties of the PECVD silicon nitride thin films deposited at relatively low temperatures. Nanostructures of the films were examined using high resolution transmission electron microscopy. Chemical bonding structures of the films were studied using Fourier Infrared Transmission Spectrum (FTIR) analysis. Mechanical properties of the films, such as creep behavior and frictional resistance, were investigated using nanoindentation and nanoscratch. The results showed that the variation in deposition temperature significantly affected the mechanical properties of the films, though all the films exhibited to have similar homogenous amorphous structures with no physical defect observed even at atomic scale. There existed strong correlations between the mechanical properties and the hydrogen concentration in the thin films.

Keywords:
Materials science Nanoindentation Plasma-enhanced chemical vapor deposition Thin film Silicon nitride Amorphous solid Chemical vapor deposition Composite material Fourier transform infrared spectroscopy Silicon Transmission electron microscopy High-resolution transmission electron microscopy Chemical engineering Nanotechnology Optoelectronics Crystallography Layer (electronics)

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6
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3.26
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0
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0.90
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Citation History

Topics

Metal and Thin Film Mechanics
Physical Sciences →  Engineering →  Mechanics of Materials
Diamond and Carbon-based Materials Research
Physical Sciences →  Materials Science →  Materials Chemistry
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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