JOURNAL ARTICLE

Comment on ``Local-Mode Absorption and Defects in Compensated Silicon-Doped Gallium Arsenide'' by W. G. Spitzer and W. Allred

H. KresselH. NelsonF. Z. Hawrylo

Year: 1969 Journal:   Journal of Applied Physics Vol: 40 (7)Pages: 3069-3070   Publisher: American Institute of Physics

Abstract

First Page

Keywords:
Gallium arsenide Doping Silicon Materials science Gallium Absorption (acoustics) Optoelectronics Metallurgy

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Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics

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