JOURNAL ARTICLE
Photoluminescence of Silicon-Compensated Gallium Arsenide
Year: 1966 Journal: Journal of Applied Physics Vol: 37 (7)Pages: 2909-2910 Publisher: American Institute of Physics
Abstract
First Page
Keywords:
Gallium arsenide Photoluminescence Silicon Materials science Optoelectronics Gallium Metallurgy
Metrics
41
Cited By
4.99
FWCI (Field Weighted Citation Impact)
9
Refs
0.95
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
ZnO doping and properties
Physical Sciences → Materials Science → Materials Chemistry
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
Chalcogenide Semiconductor Thin Films
Physical Sciences → Engineering → Electrical and Electronic Engineering
Related Documents
JOURNAL ARTICLE
Photoluminescence in compensated n-type, Si-doped gallium arsenide
I.B. Petrescu-PrahovaN.N. Winogradoff
Journal: Journal of Physics and Chemistry of Solids Year: 1971 Vol: 32 (8)Pages: 1873-1879
JOURNAL ARTICLE
Local Mode Absorption in Compensated Silicon-Doped Gallium Arsenide
Journal: Journal of Applied Physics Year: 1966 Vol: 37 (10)Pages: 3687-3691
JOURNAL ARTICLE
Photoluminescence of porous gallium arsenide
Journal: Semiconductors Year: 1997 Vol: 31 (11)Pages: 1192-1192
JOURNAL ARTICLE
Scanning photoluminescence on gallium-arsenide
Journal: Solid State Communications Year: 1971 Vol: 9 (10)Pages: 635-638