Actively mode-locked semiconductor lasers

Abstract

Measurements of actively mode-locked semiconductor lasers are described and compared to calculations of the mode-locking process using three coupled traveling-wave rate equations for the electron and photon densities. The dependence of pulse width on the modulation current and frequency are described. A limitation to minimum achievable pulse widths in mode-locked semiconductor lasers is shown to be dynamic tuning due to gain saturation. Techniques to achieve subpicosecond pulses are described, together with ways to reduce multiple pulse outputs. The amplitude and phase noise of linear- and ring-cavity semiconductor lasers were measured and fond to be tens of dB smaller than YAG and argon lasers and limited by the noise from the microwave oscillator. High-frequency phase noise is only measurable in detuned cavities, and is below -110 dBc (1 Hz) in optimally tuned cavities. The prospects for novel ways to achieve even shorter pulses are discussed.< >