Excess Bismuth-Dependent Characteristics of Chemical Solution Deposited Bi_3.15La_0.85Ti₃O₁₂ Thin Films

Abstract

The phase formation and electrical properties of (Bi3.15La0.85)Ti3O12 (BLT) thin films prepared by the chemical solution deposition method on Pt/Ti/SiO2/Si substrates have been investigated. It was observed that the microstructure and electrical properties of BLT thin films dramatically varied with the excess Bi content. The crystallographic orientation of BLT films was varied with excess Bi content and the intermediate rapid thermal annealing (RTA) process. While BLT thin films prepared without intermediate RTA process have ⟨117⟩ orientation irrespective of excess Bi content, BLT thin films with RTA process at 450°C have an orientation change with excess Bi content. The leakage current of BLT thin films slightly increased with increasing excess Bi content up to 6.5% and then considerably decreased in BLT film with 10% Bi, where was revealed to be almost stoichiometric composition.