High barrier height Au/n-type InP Schottky contacts with a POxNyHz interfacial layer

Dang Tran Quan; H. Hbib

doi:10.1016/0038-1101(93)90085-5

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High barrier height Au/n-type InP Schottky contacts with a POxNyHz interfacial layer

Dang Tran Quan H. Hbib

Year: 1993 Journal: Solid-State Electronics Vol: 36 (3)Pages: 339-344 Publisher: Elsevier BV

DOI: 10.1016/0038-1101(93)90085-5

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Keywords:

Schottky barrier Saturation current Materials science Substrate (aquarium) Saturation (graph theory) Layer (electronics) Schottky diode Capacitance Analytical Chemistry (journal) Chemistry Optoelectronics Composite material Voltage Electrode Electrical engineering

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

High barrier height Au/n-type InP Schottky contacts with a POxNyHz interfacial layer

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