On barrier height inhomogeneities of Au and Cu/n-InP Schottky contacts

H. Çetin; E. Ayyıldız

doi:10.1016/j.physb.2009.09.065

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On barrier height inhomogeneities of Au and Cu/n-InP Schottky contacts

H. Çetin E. Ayyıldız

Year: 2009 Journal: Physica B Condensed Matter Vol: 405 (2)Pages: 559-563 Publisher: Elsevier BV

DOI: 10.1016/j.physb.2009.09.065

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Keywords:

Thermionic emission Schottky barrier Materials science Diode Condensed matter physics Rectangular potential barrier Schottky diode Semiconductor Metal–semiconductor junction Electron Optoelectronics Physics

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

On barrier height inhomogeneities of Au and Cu/n-InP Schottky contacts

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