Strained-layer InGaAs quantum well lasers emitting at 1.5 μm grown by chemical beam epitaxy

Abstract

Laser characteristics of double channel planar buried heterostructure lasers with InxGa1−xAs/InGaAsP multiquantum wells (MQW) fabricated by a combination of chemical beam epitaxy and liquid phase epitaxy are described for the InAs content x of the InxGa1−xAs ranging from 0.53 to 0.71. There is no discernible difference in the minority carrier lifetime of the unstrained and strained MQWs. All the lasers have almost the same threshold current of 15±1 mA. Characteristic temperature T0 is improved in the strained lasers; the laser with x=0.62 has a T0 of as high as 98 K at 900 μm cavity length. Resonance oscillation frequency fr increases with the InAs content, i.e., the amount of the compressive strain.