Construction of amorphous silicon ISFET

Masao Gotoh; Shunri Oda; Isamu Shimizu; Atsushi Seki; Eiichi Tamiya; Isao Karube

doi:10.1016/0250-6874(89)80005-8

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Construction of amorphous silicon ISFET

Masao Gotoh Shunri Oda Isamu Shimizu Atsushi Seki Eiichi Tamiya Isao Karube

Year: 1989 Journal: Sensors and Actuators Vol: 16 (1-2)Pages: 55-65 Publisher: Elsevier BV

DOI: 10.1016/0250-6874(89)80005-8

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Keywords:

ISFET Amorphous solid Materials science Silicon Analytical Chemistry (journal) Amorphous silicon Fourier transform infrared spectroscopy Silicon nitride Nanocrystalline silicon Field-effect transistor Transistor Optoelectronics Chemistry Crystalline silicon Chemical engineering Electrical engineering Crystallography Chromatography

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Analytical Chemistry and Sensors

Physical Sciences → Chemical Engineering → Bioengineering

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Construction of amorphous silicon ISFET

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