Glucose Sensor Based On an Amorphous Silicon Isfet

Abstract

Abstract An amorphous silicon ion sensitive field effect transistor (a-ISFET) was first applied to glucose sensors. When glucose oxidase was immobilized on the membrane, the sensor gave a linear relationship between the initial rate of the gate output voltage change and the logarithmic value of glucose concentration between 0.1 and 1 mg/ml at pH 7.0, 37°C. Determination of glucose was possible within 1 min. the system can be used for three weeks with only slight loss of enzymatic activity.