JOURNAL ARTICLE

Carbon Incorporation on (1101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy

Norikatsu KoideToshiki HikosakaYoshio HondaMasahito YamaguchiNobuhiko Sawaki

Year: 2006 Journal:   Japanese Journal of Applied Physics Vol: 45 (10R)Pages: 7655-7655   Publisher: Institute of Physics

Abstract

Using C 2 H 2 as the source material, the incorporation of carbon into a (1101)AlGaN facet was studied in metal organic vapor phase epitaxy. The cathodo luminescence (CL) spectra for the sample surface were dominated by two near-band-edge emission peaks, assigned as a donor bound exciton (DBE) peak and a carbon-related exciton peak. The emission intensity of the carbon related exciton peak was enhanced by carbon doping, and the enhancement was more efficient on the (1101) facets than on the (0001) facet. It was found that more carbon is incorporated in a sample with high Al composition on the (1101) facets. In the case of Mg doping, on the other hand, the optical properties on the (1101) facets are nearly the same as those of the (0001) facet.

Keywords:
Facet (psychology) Exciton Carbon fibers Epitaxy Materials science Doping Phase (matter) Luminescence Metal Photoluminescence Analytical Chemistry (journal) Optoelectronics Chemistry Nanotechnology Condensed matter physics Physics

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3
Cited By
0.28
FWCI (Field Weighted Citation Impact)
19
Refs
0.56
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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