An understanding of ohmic contact formation with Ge doping of n-GaAs

M. Jaroš; H.L. Hartnagel

doi:10.1016/0038-1101(75)90122-7

ScienceGate Book Chapters

JOURNAL ARTICLE

An understanding of ohmic contact formation with Ge doping of n-GaAs

M. Jaroš H.L. Hartnagel

Year: 1975 Journal: Solid-State Electronics Vol: 18 (11)Pages: 1029-1030 Publisher: Elsevier BV

DOI: 10.1016/0038-1101(75)90122-7

Get Full-Text PDF Get Analytical Report

Keywords:

Ohmic contact Impurity Dopant Doping Materials science Lattice (music) Condensed matter physics Germanium Optoelectronics Engineering physics Nanotechnology Chemistry Physics Silicon

Metrics

Cited By

0.82

FWCI (Field Weighted Citation Impact)

Refs

0.68

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

An understanding of ohmic contact formation with Ge doping of n-GaAs

Metrics

Topics

Related Documents

Au / Ni / SnNi / n ‐ GaAs Interface: Ohmic Contact Formation

Ohmic Contact Formation for N-Type Diamond by Selective Doping

Ion beam mixing for ohmic contact formation to n-type GaAs

Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

Combined EBIC—Auger analysis of AuGeNi/n‐GaAs ohmic contact formation