Instability Observed in InP (MIS) Schottky Barrier Solar Cells

Kiichi Kamimura; Akio Kunioka

doi:10.7567/jjaps.20s2.83

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Instability Observed in InP (MIS) Schottky Barrier Solar Cells

Kiichi Kamimura Akio Kunioka

Year: 1981 Journal: Japanese Journal of Applied Physics Vol: 20 (S2)Pages: 83-83 Publisher: Institute of Physics

DOI: 10.7567/jjaps.20s2.83

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Abstract

Instabilities have been observed in the electric and photovoltaic characteristics of InP (MIS) Schottky barrier solar cells. The degradation has been more serious for n-type sample than for p-type sample. The degradation in n-type sample seems to be caused by the decrease of the barrier height and in p-type sample, it seems to be explained in terms of the increase in sheet resistance of the gate metal.

Keywords:

Schottky barrier Degradation (telecommunications) Materials science Optoelectronics Sample (material) Schottky diode Sheet resistance Photovoltaic system Instability Chemistry Electrical engineering Nanotechnology Physics Engineering Layer (electronics)

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Instability Observed in InP (MIS) Schottky Barrier Solar Cells

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