Barrier height modification in silicon Schottky (MIS) solar cells

Abstract

A study of experimental data on Cr-oxide-p-Si solar cells has led to a metal evaporation procedure which gives 0.50 V < V oc < 0.56 V. This voltage is independent of the method used in oxide formation when oxide thickness ranges from 10 to 30 Å. It is concluded that slow deposition of the Cr on an oxide interface leads to a lowered metal work function and thus an increased V oc . A high n-value and fixed charge in the oxide are not necessary to obtain a high V oc .