High-voltage polycrystalline CdSe thin-film transistors

Johan De Baets; Jan Vanfleteren; I. De Rycke; Jan Doutreloigne; André Van Calster; Patrick De Visschere

doi:10.1109/16.47767

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High-voltage polycrystalline CdSe thin-film transistors

Johan De Baets Jan Vanfleteren I. De Rycke Jan Doutreloigne André Van Calster Patrick De Visschere

Year: 1990 Journal: IEEE Transactions on Electron Devices Vol: 37 (3)Pages: 636-639 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/16.47767

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Abstract

The properties of self-aligned high-voltage CdSe thin-film transistors (TFTs) are described. By analyzing the different failure mechanisms, it is found that In-doped CdSe makes device operation up to 200 V feasible. Furthermore, the high-voltage CdSe TFT shows excellent low off currents and high transconductance.< >

Keywords:

Thin-film transistor Transconductance Optoelectronics Materials science Transistor Crystallite Voltage Electrical engineering Nanotechnology Engineering Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

High-voltage polycrystalline CdSe thin-film transistors

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