Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces

B.M. Kim; Carl A. Ventrice; Tim Mercer; René M. Overney; L. J. Schowalter

doi:10.1016/s0169-4332(96)00179-1

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Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces

B.M. Kim Carl A. Ventrice Tim Mercer René M. Overney L. J. Schowalter

Year: 1996 Journal: Applied Surface Science Vol: 104-105 Pages: 409-416 Publisher: Elsevier BV

DOI: 10.1016/s0169-4332(96)00179-1

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Keywords:

Vicinal Monolayer Reflection high-energy electron diffraction Overlayer Electron diffraction Nucleation Diffraction Coalescence (physics) Substrate (aquarium) Molecular beam epitaxy Crystallography Epitaxy Island growth Materials science Chemistry Layer (electronics) Optics Molecular physics Nanotechnology Physics Geology

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces

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