Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy

Neysha Lobo‐Ploch; Abdul Kadir; Masihhur R. Laskar; Ali Shah; M. R. Gokhale; A. Azizur Rahman; B. M. Arora; K. L. Narasimhan; Arnab Bhattacharya

doi:10.1016/j.jcrysgro.2008.08.022

JOURNAL ARTICLE

Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy

Neysha Lobo‐Ploch Abdul Kadir Masihhur R. Laskar Ali Shah M. R. Gokhale A. Azizur Rahman B. M. Arora K. L. Narasimhan Arnab Bhattacharya

Year: 2008 Journal: Journal of Crystal Growth Vol: 310 (23)Pages: 4747-4750 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2008.08.022

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Keywords:

Absorptance Band gap Photothermal therapy Materials science Photothermal spectroscopy Metalorganic vapour phase epitaxy Optoelectronics Attenuation coefficient Optics Spectroscopy Absorption spectroscopy Analytical Chemistry (journal) Chemistry Nanotechnology Reflectivity Epitaxy Physics Layer (electronics)

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Thermal properties of materials

Physical Sciences → Materials Science → Materials Chemistry

Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy

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