Physical properties of thermally evaporated silicon films nitrided at different rf plasma-processing time

S. H. Mohamed; M. Raaif; A. M. Abd El-Rahman

doi:10.1007/s10853-011-6117-0

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Physical properties of thermally evaporated silicon films nitrided at different rf plasma-processing time

S. H. Mohamed M. Raaif A. M. Abd El-Rahman

Year: 2011 Journal: Journal of Materials Science Vol: 47 (6)Pages: 2875-2881 Publisher: Springer Science+Business Media

DOI: 10.1007/s10853-011-6117-0

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Keywords:

Materials science Nitriding Thin film Plasma Electrical resistivity and conductivity Plasma processing Inductively coupled plasma Silicon Amorphous solid Band gap Silicon nitride Analytical Chemistry (journal) Optoelectronics Composite material Nanotechnology Layer (electronics) Crystallography Chemistry

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Thin-Film Transistor Technologies

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Semiconductor materials and devices

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ZnO doping and properties

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Physical properties of thermally evaporated silicon films nitrided at different rf plasma-processing time

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