Growth of Thin Iron Oxide Films on Si(100) by MOCVD

Abstract

The deposition of thin iron oxide films on by metallorganic chemical vapor deposition at was systematically studied as a function of temperature between 673 and . Ferrocene and oxygen were used as precursors. The growth rate was measured as a function of temperature and the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy, energy dispersive X-ray analysis, and scanning electron microscopy. The change from the kinetically controlled regime to the transport controlled regime occurs near . At similar temperatures, a phase change of the deposited material was observed. Films prepared at temperatures higher than show the structure of , whereas deposition at lower temperature leads to the growth of and other oxide phases. The XRD pattern of these films can be explained by the coexistence of different iron oxide phases, namely , , and/or .