Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers

Chun Yu; S.J. Chang; Po-Chun Chang; Yu‐Cheng Lin; C.T. Lee

doi:10.1016/j.spmi.2006.09.011

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Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers

Chun Yu S.J. Chang Po-Chun Chang Yu‐Cheng Lin C.T. Lee

Year: 2006 Journal: Superlattices and Microstructures Vol: 40 (4-6)Pages: 470-475 Publisher: Elsevier BV

DOI: 10.1016/j.spmi.2006.09.011

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Keywords:

Schottky barrier Materials science Responsivity Optoelectronics Ultraviolet Barrier layer Photodetector Schottky diode Layer (electronics) Dark current Nitride Metal–semiconductor junction Nanotechnology

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers

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