Structural, electrical and optical properties of Si doped ZnO films grown by atomic layer deposition

Hai Yuan

doi:10.1007/s10854-012-0713-x

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Structural, electrical and optical properties of Si doped ZnO films grown by atomic layer deposition

Hai Yuan

Year: 2012 Journal: Journal of Materials Science Materials in Electronics Vol: 23 (11)Pages: 2075-2081 Publisher: Springer Science+Business Media

DOI: 10.1007/s10854-012-0713-x

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Keywords:

X-ray photoelectron spectroscopy Materials science Doping Band gap Electrical resistivity and conductivity Analytical Chemistry (journal) Valence (chemistry) Thin film Layer (electronics) Hall effect Chemistry Nanotechnology Chemical engineering Optoelectronics

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper-based nanomaterials and applications

Physical Sciences → Materials Science → Materials Chemistry

Structural, electrical and optical properties of Si doped ZnO films grown by atomic layer deposition

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