Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

Manoj Kumar; Burak Tekcan; Ali K. Okyay

doi:10.1016/j.cap.2014.10.001

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Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

Manoj Kumar Burak Tekcan Ali K. Okyay

Year: 2014 Journal: Current Applied Physics Vol: 14 (12)Pages: 1703-1706 Publisher: Elsevier BV

DOI: 10.1016/j.cap.2014.10.001

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Keywords:

Dark current Responsivity Materials science Ultraviolet Photodetector Optoelectronics Atomic layer deposition Semiconductor Layer (electronics) Insulator (electricity) Barrier layer Metal Nanotechnology

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

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