Photoluminescence studies in strained InAs/InP quantum wells grown by hydride vapour-phase epitaxy

Abstract

Strained InAs/InP single quantum wells grown by hydride vapour phase epitaxy have been investigated by photoluminescence. The evolution of the spectra when the temperature is varied above 5 K is analysed in particular. At temperatures larger than approximately 150 K, a signal is generally detected at an energy higher than that of the heavy exciton (e1hh1) peak which is still observed. It is interpreted as being due to the recombination of conduction band electrons in the InP barriers with heavy holes in the InAs well (echh1). A value of 0.48+or-0.02 eV is determined for the strained valence band offset from the fit of a simple single-band model to both the e1hh1 and echh1 transition energies.