Abstract
Ge2Sb2Te5 thin films and Si doped Ge2Sb2Te5 thin films were deposited by electron beam evaporation method. The crystallization behaviors of the films were investigated by using the in situ resistance measurement. Through in situ resistance measurement, the increases of amorphous stability, crystallization rate and crystalline resistivity after Si doping were observed. The promoted nucleation process and the retardation of crystal growth were found in Si doped samples through the calculation of JMAK equation.
Keywords:
Crystallization Materials science Nucleation Doping Amorphous solid Amorphous silicon Evaporation Silicon Thin film Electron beam physical vapor deposition Electrical resistivity and conductivity Crystal (programming language) Chemical engineering Crystallography Optoelectronics Nanotechnology Crystalline silicon Chemistry Electrical engineering Thermodynamics
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Topics
Phase-change materials and chalcogenides
Physical Sciences → Materials Science → Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences → Engineering → Electrical and Electronic Engineering
Glass properties and applications
Physical Sciences → Materials Science → Ceramics and Composites
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