Crystallization behavior of sputter-deposited nitrogren-doped amorphous Ge2Sb2Te5 thin films

Jeong‐Woo Park; Dong C. Lee; Taehee Jeong; Cheong Yeon; Sang J. Kim; Hun Seo; H. C. Lim

doi:10.1117/12.997570

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Crystallization behavior of sputter-deposited nitrogren-doped amorphous Ge2Sb2Te5 thin films

Jeong‐Woo Park Dong C. Lee Taehee Jeong Cheong Yeon Sang J. Kim Hun Seo H. C. Lim

Year: 1999 Pages: 36-36

DOI: 10.1117/12.997570

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Keywords:

Crystallization Doping Sputtering Materials science Amorphous solid Thin film Sputter deposition Amorphous semiconductors Optoelectronics Chemical engineering Nanotechnology Crystallography Chemistry

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Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Glass properties and applications

Physical Sciences → Materials Science → Ceramics and Composites

Crystallization behavior of sputter-deposited nitrogren-doped amorphous Ge2Sb2Te5 thin films

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