The effect of oxygen partial pressure on the properties of RF-sputtered Al2O3 thin films

Ga-Lane Chen; J.M. Sivertsen; J.H. Judy

doi:10.1016/0167-577x(84)90023-5

ScienceGate Book Chapters

JOURNAL ARTICLE

The effect of oxygen partial pressure on the properties of RF-sputtered Al2O3 thin films

Ga-Lane Chen J.M. Sivertsen J.H. Judy

Year: 1984 Journal: Materials Letters Vol: 2 (3)Pages: 196-201 Publisher: Elsevier BV

DOI: 10.1016/0167-577x(84)90023-5

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Thin film Partial pressure Sputtering X-ray photoelectron spectroscopy Substrate (aquarium) Ellipsometry Argon Analytical Chemistry (journal) Refractive index Oxygen Microelectronics Diffraction Deposition (geology) Optoelectronics Optics Chemical engineering Nanotechnology

Metrics

Cited By

0.48

FWCI (Field Weighted Citation Impact)

Refs

0.63

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Optical Coatings and Gratings

Physical Sciences → Materials Science → Surfaces, Coatings and Films

The effect of oxygen partial pressure on the properties of RF-sputtered Al2O3 thin films

Metrics

Citation History

Topics

Related Documents

Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

Effect of substrate bias and oxygen partial pressure on properties of RF magnetron sputtered HfO2 thin films

Oxygen partial pressure dependence of memory effect of sputtered nc-Al/α-Al2O3 thin films

Influence of oxygen partial pressure on optical and structural properties of RF sputtered ZnO thin films

Effect of annealing and oxygen partial pressure on the RF sputtered WO3 thin films for electrochromic applications