Solid state batteries using thin film technology

Abstract

Solid state battery technology had been developed in a large explosion fashion in recent years. The main influence of this is related to economics and connected with energy production, storage and utilisation. Due to such industrial problems, international collaborative researches become necessary. From the point of electrodes consideration, materials must be light and give high cell voltage and capacity. Therefore, thin-film technology may be one of the best solutions. Thin-film technique reduces the internal resistance of solid state battery. Its application provides various advantages over other techniques using bulk materials. For example, thinning of layers to give lower electric resistance in the transverse direction, provide a clean surface for the compound, improve the electrode-electrolyte interface contact, make film deposition of alkali metals easier, give good adhesion between layers, etc. Establishment of a reliable process of thin-film microbatteries fabrication would make them available for their use as power sources in integrated circuits. Some important fast-ionic conductors (solid electrolytes) are the iron compounds such as PbF/sub 2/, iodine compounds such as RbAg/sub 4/I/sub 5/ and LiI. Using thin-film for solid state electrodes offers certain significant advantages over their crystalline counterpart, such as easy to synthesise, easy to implement, larger electrochemically active surface, high diffusion coefficient of the mobile ion, a large number of available sites for the intercalants, etc. Two systems of amorphous materials are currently used, the semiconducting oxide-based glasses such as V/sub 2/O/sub 5/, MoO/sub 3/, and the amorphous chalcogenides, such as MoS/sub 2/, MoS/sub 3/, V/sub 2/S/sub 5/, NiPS/sub 3/.