JOURNAL ARTICLE
Localization versus carrier-screening effects in InGaN quantum wells — A time-resolved cathodoluminescence study
Year: 2005 Journal: AIP conference proceedings Vol: 772 Pages: 301-302 Publisher: American Institute of Physics
Abstract
Time‐resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially‐time‐resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local transients recorded at indium rich regions.
Keywords:
Cathodoluminescence Indium Quantum well Materials science Optoelectronics Indium gallium nitride Wide-bandgap semiconductor Luminescence Physics Optics Laser
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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