JOURNAL ARTICLE
Carrier relaxation and recombination in InGaN/GaN quantum heterostructures probed with time-resolved cathodoluminescence
Xingang ZhangDaniel H. RichJ. T. KobayashiNobuhiko P. KobayashiP.D. Dapkus
Year: 1998 Journal: MRS Proceedings Vol: 512 Publisher: Cambridge University Press
Keywords:
Cathodoluminescence Materials science Heterojunction Quantum well Luminescence Relaxation (psychology) Optoelectronics Photoluminescence Passivation Molecular physics Optics Laser Layer (electronics) Nanotechnology Physics
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16
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0.18
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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