Raman characterization of Bi12SiO20 thin films obtained by pulsed laser deposition

J. C. Alonso; R. Diamant; E. Haro‐Poniatowski; M. Fernández‐Guasti; G. Muñoz; I. Camarillo; M. Jouanne; J. F. Morhange

doi:10.1016/s0169-4332(96)00674-5

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Raman characterization of Bi12SiO20 thin films obtained by pulsed laser deposition

J. C. Alonso R. Diamant E. Haro‐Poniatowski M. Fernández‐Guasti G. Muñoz I. Camarillo M. Jouanne J. F. Morhange

Year: 1997 Journal: Applied Surface Science Vol: 109-110 Pages: 359-361 Publisher: Elsevier BV

DOI: 10.1016/s0169-4332(96)00674-5

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Keywords:

Raman spectroscopy Pulsed laser deposition Thin film Characterization (materials science) Deposition (geology) Materials science Bismuth Analytical Chemistry (journal) Laser Oxygen Spectral line Chemistry Optics Nanotechnology Metallurgy Geology

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Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Raman characterization of Bi12SiO20 thin films obtained by pulsed laser deposition

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