Magnetoresistance in a room temperature ferromagnetic diluted magnetic semiconductor Zn1−xCrxTe

Abstract

We observed negative magnetoresistance (MR) in a ferromagnetic diluted magnetic semiconductor Zn1−xCrxTe (x=0.20). At a temperature of 20 K, the MR ratio was −26% (Δρ=−4100 Ωcm) in a magnetic field of 10 kOe. The MR showed a clear hysteresis loop. Negative MR was observed up to about room temperature, corresponding to a Curie temperature. These behaviors indicate that the electrical properties of Zn1−xCrxTe are strongly affected by its magnetic properties through a strong carrier–spin interaction.