Self-ordering of Ge islands on step-bunched Si(111) surfaces

Abstract

By using step-bunched Si(111) surfaces as templates, we demonstrate the self-assembly of an ordered distribution of Ge islands without lithographic patterning. Initially, islands nucleate and evolve at step edges, up to complete ripening, forming long ribbons. Subsequently, island nucleation takes place at the center of flat terraces. Ge islands appear to be regularly spaced in scanning tunneling microscope images. The exploitation of this effect provides a possible route to grow ordered arrays of semiconducting nanostructures.