JOURNAL ARTICLE

Hole transport in SiGe channels on step-bunched vicinal Si surfaces

R. NeumannKarl BrünnerG. Abstreiter

Year: 2002 Journal:   Physica E Low-dimensional Systems and Nanostructures Vol: 13 (2-4)Pages: 986-989   Publisher: Elsevier BV
Keywords:
Vicinal Electrical resistivity and conductivity Anisotropy Materials science Molecular beam epitaxy Perpendicular Condensed matter physics Doping Silicon Layer (electronics) Optoelectronics Epitaxy Nanotechnology Chemistry Optics Geometry Electrical engineering Physics

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0.18
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Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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