Hole transport in SiGe channels on step-bunched vicinal Si surfaces

R. Neumann; Karl Brünner; G. Abstreiter

doi:10.1016/s1386-9477(02)00251-5

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Hole transport in SiGe channels on step-bunched vicinal Si surfaces

R. Neumann Karl Brünner G. Abstreiter

Year: 2002 Journal: Physica E Low-dimensional Systems and Nanostructures Vol: 13 (2-4)Pages: 986-989 Publisher: Elsevier BV

DOI: 10.1016/s1386-9477(02)00251-5

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Keywords:

Vicinal Electrical resistivity and conductivity Anisotropy Materials science Molecular beam epitaxy Perpendicular Condensed matter physics Doping Silicon Layer (electronics) Optoelectronics Epitaxy Nanotechnology Chemistry Optics Geometry Electrical engineering Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Hole transport in SiGe channels on step-bunched vicinal Si surfaces

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